Daily Papers

The discovery of van der Waals magnets has established a new domain in the field of magnetism, opening novel pathways for the electrical control of magnetic properties. In this context, Fe3GeTe2 (FGT) emerges as an exemplary candidate owing to its intrinsic metallic properties, which facilitate the interplay of both charge and spin degrees of freedom. Here, the bidirectional voltage control of exchange bias (EB) effect in a perpendicularly magnetized all-van der Waals FGT/O-FGT/hBN heterostructure is demonstrated. The antiferromagnetic O-FGT layer is formed by naturally oxidizing the FGT surface. The observed EB magnitude reaches 1.4 kOe with a blocking temperature (150 K) reaching close to the Curie temperature of FGT. Both the exchange field and the blocking temperature values are among the highest in the context of layered materials. The EB modulation exhibits a linear dependence on the gate voltage and its polarity, observable in both positive and negative field cooling (FC) experiments. Additionally, gate voltage-controlled magnetization switching, highlighting the potential of FGT-based heterostructures is demonstrated in advanced spintronic devices. These findings display a methodology to modulate the magnetism of van der Waals magnets offering new avenues for the development of high-performance magnetic devices.

A bilayer formed by stacking two distinct materials creates a moiré lattice, which can serve as a platform for novel electronic phases. In this work we study a unique example of such a system: the graphene-black phosphorus heterostructure (G/BP), which has been suggested to have an intricate band structure. Most notably, the valence band hosts a quasi-one-dimensional region in the Brillouin zone of high density of states, suggesting that various many-body electronic phases are likely to emerge. We derive an effective tight-binding model that reproduces this band structure, and explore the emergent broken-symmetry phases when interactions are introduced. Employing a mean-field analysis, we find that the favored ground-state exhibits a striped spin density wave (SDW) order, characterized by either one of two-fold degenerate wave-vectors that are tunable by gating. Further exploring the phase-diagram controlled by gate voltage and the interaction strength, we find that the SDW-ordered state undergoes a metal to insulator transition via an intermediate metallic phase which supports striped SDW correlations. Possible experimental signatures are discussed, in particular a highly anisotropic dispersion of the collective excitations which should be manifested in electric and thermal transport.

We discuss the use of tunneling electron current to control and catalyze chemical reactions. Assuming the separation of time scales for electronic and nuclear dynamics we employ the Langevin equation for the reaction coordinate. The Langevin equation contains current-induced forces and is used to define nonequilibrium, effective potential energy surface for current-carrying molecular systems. The current-induced forces are computed via Keldysh nonequilibrium Green's functions. Once the nonequilibrium, current-depended potential energy surface is defined, the chemical reaction is modeled as an escape of a Brownian particle from the potential well. We demonstrate that the barrier between the reactant and the product states can be controlled by the bias voltage. When the molecule is asymmetrically coupled to the electrodes, the reaction can be catalyzed or stopped depending on the polarity of the tunneling current.

In this paper, we describe a design of a mixed signal circuit for a binary neuron (a.k.a perceptron, threshold logic gate) and a methodology for automatically embedding such cells in ASICs. The binary neuron, referred to as an FTL (flash threshold logic) uses floating gate or flash transistors whose threshold voltages serve as a proxy for the weights of the neuron. Algorithms for mapping the weights to the flash transistor threshold voltages are presented. The threshold voltages are determined to maximize both the robustness of the cell and its speed. The performance, power, and area of a single FTL cell are shown to be significantly smaller (79.4%), consume less power (61.6%), and operate faster (40.3%) compared to conventional CMOS logic equivalents. Also included are the architecture and the algorithms to program the flash devices of an FTL. The FTL cells are implemented as standard cells, and are designed to allow commercial synthesis and P&R tools to automatically use them in synthesis of ASICs. Substantial reductions in area and power without sacrificing performance are demonstrated on several ASIC benchmarks by the automatic embedding of FTL cells. The paper also demonstrates how FTL cells can be used for fixing timing errors after fabrication.

Conventional semiconductor-based integrated circuits are gradually approaching fundamental scaling limits. Many prospective solutions have recently emerged to supplement or replace both the technology on which basic devices are built and the architecture of data processing. Neuromorphic circuits are a promising approach to computing where techniques used by the brain to achieve high efficiency are exploited. Many existing neuromorphic circuits rely on unconventional and useful properties of novel technologies to better mimic the operation of the brain. One such technology is single flux quantum (SFQ) logic -- a cryogenic superconductive technology in which the data are represented by quanta of magnetic flux (fluxons) produced and processed by Josephson junctions embedded within inductive loops. The movement of a fluxon within a circuit produces a quantized voltage pulse (SFQ pulse), resembling a neuronal spiking event. These circuits routinely operate at clock frequencies of tens to hundreds of gigahertz, making SFQ a natural technology for processing high frequency pulse trains. Prior proposals for SFQ neural networks often require energy-expensive fluxon conversions, involve heterogeneous technologies, or exclusively focus on device level behavior. In this paper, a design methodology for deep single flux quantum neuromorphic networks is presented. Synaptic and neuronal circuits based on SFQ technology are presented and characterized. Based on these primitives, a deep neuromorphic XOR network is evaluated as a case study, both at the architectural and circuit levels, achieving wide classification margins. The proposed methodology does not employ unconventional superconductive devices or semiconductor transistors. The resulting networks are tunable by an external current, making this proposed system an effective approach for scalable cryogenic neuromorphic computing.

We investigate Josephson arrays consisting of a dice-lattice network of superconducting weak links surrounding rhombic plaquettes of proximitized semiconductor. Josephson coupling of the weak links and electron density in the plaquettes are independently controlled by separate electrostatic gates. Applied magnetic flux results in an intricate pattern of switching currents associated with frustration, f. For depleted plaquettes, the switching current is nearly periodic in f, expected for a phase-only description, while occupied plaquettes yield a decreasing envelope of switching currents with increasing f. A model of flux dependence based on ballistic small-area junctions and diffusive large-area plaquettes yields excellent agreement with experiment.

Correlated electron systems are among the centerpieces of modern condensed matter sciences, where many interesting physical phenomena, such as metal-insulator transition and high-Tc superconductivity appear. Recent efforts have been focused on electrostatic doping of such materials to probe the underlying physics without introducing disorder as well as to build field-effect transistors that may complement conventional semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) technology. This review focuses on metal-insulator transition mechanisms in correlated electron materials and three-terminal field effect devices utilizing such correlated oxides as the channel layer. We first describe how electron-disorder interaction, electron-phonon interaction and/or electron correlation in solids could modify the electronic properties of materials and lead to metal-insulator transitions. Then we analyze experimental efforts toward utilizing these transitions in field effect transistors and their underlying principles. It is pointed out that correlated electron systems show promise among these various materials displaying phase transitions for logic technologies. Furthermore, novel phenomena emerging from electronic correlation could enable new functionalities in field effect devices. We then briefly review unconventional electrostatic gating techniques, such as ionic liquid gating and ferroelectric gating, which enables ultra large carrier accumulation density in the correlated materials which could in turn lead to phase transitions. The review concludes with a brief discussion on the prospects and suggestions for future research directions in correlated oxide electronics for information processing.

Understanding the structure and function of circuits is crucial for electronic design automation (EDA). Circuits can be formulated as And-Inverter graphs (AIGs), enabling efficient implementation of representation learning through graph neural networks (GNNs). Masked modeling paradigms have been proven effective in graph representation learning. However, masking augmentation to original circuits will destroy their logical equivalence, which is unsuitable for circuit representation learning. Moreover, existing masked modeling paradigms often prioritize structural information at the expense of abstract information such as circuit function. To address these limitations, we introduce MGVGA, a novel constrained masked modeling paradigm incorporating masked gate modeling (MGM) and Verilog-AIG alignment (VGA). Specifically, MGM preserves logical equivalence by masking gates in the latent space rather than in the original circuits, subsequently reconstructing the attributes of these masked gates. Meanwhile, large language models (LLMs) have demonstrated an excellent understanding of the Verilog code functionality. Building upon this capability, VGA performs masking operations on original circuits and reconstructs masked gates under the constraints of equivalent Verilog codes, enabling GNNs to learn circuit functions from LLMs. We evaluate MGVGA on various logic synthesis tasks for EDA and show the superior performance of MGVGA compared to previous state-of-the-art methods. Our code is available at https://github.com/wuhy68/MGVGA.

Spiking Neural Networks (SNNs) have garnered significant attention as a central paradigm in neuromorphic computing, owing to their energy efficiency and biological plausibility. However, training deep SNNs has critically depended on explicit normalization schemes, leading to a trade-off between performance and biological realism. To resolve this conflict, we propose a normalization-free learning framework that incorporates lateral inhibition inspired by cortical circuits. Our framework replaces the traditional feedforward SNN layer with distinct excitatory (E) and inhibitory (I) neuronal populations that capture the key features of the cortical E-I interaction. The E-I circuit dynamically regulates neuronal activity through subtractive and divisive inhibition, which respectively control the excitability and gain of neurons. To stabilize end-to-end training of the biologically constrained SNNs, we propose two key techniques: E-I Init and E-I Prop. E-I Init is a dynamic parameter initialization scheme that balances excitatory and inhibitory inputs while performing gain control. E-I Prop decouples the backpropagation of the circuit from the forward pass, regulating gradient flow. Experiments across multiple datasets and network architectures demonstrate that our framework enables stable training of deep normalization-free SNNs with biological realism, achieving competitive performance. Therefore, our work not only provides a solution to training deep SNNs but also serves as a computational platform for further exploring the functions of E-I interaction in large-scale cortical computation. Code is available at https://github.com/vwOvOwv/DeepEISNN.

Analog IC design relies on human experts to search for parameters that satisfy circuit specifications with their experience and intuitions, which is highly labor intensive, time consuming and suboptimal. Machine learning is a promising tool to automate this process. However, supervised learning is difficult for this task due to the low availability of training data: 1) Circuit simulation is slow, thus generating large-scale dataset is time-consuming; 2) Most circuit designs are propitiatory IPs within individual IC companies, making it expensive to collect large-scale datasets. We propose Learning to Design Circuits (L2DC) to leverage reinforcement learning that learns to efficiently generate new circuits data and to optimize circuits. We fix the schematic, and optimize the parameters of the transistors automatically by training an RL agent with no prior knowledge about optimizing circuits. After iteratively getting observations, generating a new set of transistor parameters, getting a reward, and adjusting the model, L2DC is able to optimize circuits. We evaluate L2DC on two transimpedance amplifiers. Trained for a day, our RL agent can achieve comparable or better performance than human experts trained for a quarter. It first learns to meet hard-constraints (eg. gain, bandwidth), and then learns to optimize good-to-have targets (eg. area, power). Compared with grid search-aided human design, L2DC can achieve 250times higher sample efficiency with comparable performance. Under the same runtime constraint, the performance of L2DC is also better than Bayesian Optimization.

Electrical control of individual spins and photons in solids is key for quantum technologies, but scaling down to small, static systems remains challenging. Here, we demonstrate nanoscale electrical tuning of neutral and charged excitons in monolayer WSe2 using 1-nm carbon nanotube gates. Electrostatic simulations reveal a confinement radius below 15 nm, reaching the exciton Bohr radius limit for few-layer dielectric spacing. In situ photoluminescence spectroscopy shows gate-controlled conversion between neutral excitons, negatively charged trions, and biexcitons at 4 K. Important for quantum information processing applications, our measurements indicate gating of a local 2D electron gas in the WSe2 layer, coupled to photons via trion transitions with binding energies exceeding 20 meV. The ability to deterministically tune and address quantum emitters using nanoscale gates provides a pathway towards large-scale quantum optoelectronic circuits and spin-photon interfaces for quantum networking.

Talking head synthesis is vital for virtual avatars and human-computer interaction. However, most existing methods are typically limited to accepting control from a single primary modality, restricting their practical utility. To this end, we introduce ACTalker, an end-to-end video diffusion framework that supports both multi-signals control and single-signal control for talking head video generation. For multiple control, we design a parallel mamba structure with multiple branches, each utilizing a separate driving signal to control specific facial regions. A gate mechanism is applied across all branches, providing flexible control over video generation. To ensure natural coordination of the controlled video both temporally and spatially, we employ the mamba structure, which enables driving signals to manipulate feature tokens across both dimensions in each branch. Additionally, we introduce a mask-drop strategy that allows each driving signal to independently control its corresponding facial region within the mamba structure, preventing control conflicts. Experimental results demonstrate that our method produces natural-looking facial videos driven by diverse signals and that the mamba layer seamlessly integrates multiple driving modalities without conflict.

Power electronic converters are becoming the main components of modern power systems due to the increasing integration of renewable energy sources. However, power converters may become unstable when interacting with the complex and time-varying power grid. In this paper, we propose an adaptive data-driven control method to stabilize power converters by using only online input-output data. Our contributions are threefold. First, we reformulate the output-feedback control problem as a state-feedback linear quadratic regulator (LQR) problem with a controllable non-minimal state, which can be constructed from past input-output signals. Second, we propose a data-enabled policy optimization (DeePO) method for this non-minimal realization to achieve efficient output-feedback adaptive control. Third, we use high-fidelity simulations to verify that the output-feedback DeePO can effectively stabilize grid-connected power converters and quickly adapt to the changes in the power grid.